SVF2N60FG

SVF2N60M/MG/MJ/N/NF/F/FG/T/D_Datasheet 2A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF2N60M/MG/MJ/N/NF/F/FG/T/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize onstate resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers. FEATURES ∗ 2A,600V,RDS(on)(typ.)=3.7Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. SVF2N60M SVF2N60MG SVF2N60MJ SVF2N60N SVF2N60NF SVF2N60F SVF2N60FG SVF2N60T Package Type TO-251D-3L TO-251D-3L TO-251J-3L TO-126-3L TO-126F-3L TO-220F-3L TO-220F-3L TO-220-3L Marking SVF2N60M SVF2N60MG SVF2N60MJ SVF...