SVF11N90PN_Datasheet
11A, 900V N-CHANNEL MOSFET
DESCRIPTION
SVF11N90PN is an N-channel enhancement mode power MOS field ...
SVF11N90PN_Datasheet
11A, 900V N-CHANNEL
MOSFET
DESCRIPTION
SVF11N90PN is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers.
FEATURES
∗ 11A, 900V, RDS(on) (typ.)=0.82Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability
NOMENCLATURE
ORDERING INFORMATION
Part No. SVF11N90PN
Package TO-3PN
Marking 11N90
Material Pb free
Packing Tube
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.0
2012.12.18 Page 1 of 7
Silan Microelectronics
SVF11N90PN_Datasheet
ABSOLUTE MAXIMUM RATINGS (unless ot...