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SVD640F Datasheet

Part Number SVD640F
Manufacturers Silan Microelectronics
Logo Silan Microelectronics
Description MOSFET
Datasheet SVD640F DatasheetSVD640F Datasheet (PDF)

SVD640T/D/F_Datasheet 18A, 200V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD640T/D/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure middle/low-voltage VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devic.

  SVD640F   SVD640F






Part Number SVD640T
Manufacturers Silan Microelectronics
Logo Silan Microelectronics
Description MOSFET
Datasheet SVD640F DatasheetSVD640T Datasheet (PDF)

SVD640T/D/F_Datasheet 18A, 200V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD640T/D/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure middle/low-voltage VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devic.

  SVD640F   SVD640F







Part Number SVD640D
Manufacturers Silan Microelectronics
Logo Silan Microelectronics
Description MOSFET
Datasheet SVD640F DatasheetSVD640D Datasheet (PDF)

SVD640T/D/F_Datasheet 18A, 200V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD640T/D/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure middle/low-voltage VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devic.

  SVD640F   SVD640F







MOSFET

SVD640T/D/F_Datasheet 18A, 200V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD640T/D/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure middle/low-voltage VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers. FEATURES  18A,200V,RDS(on)(typ.)=0.12Ω@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability ORDERING INFORMATION Part No. Package SVD640T SVD640D SVD640DTR SVD640F TO-220-3L TO-252-2L TO-252-2L TO-220F-3L Marking SVD640T SVD640D SVD640D SVD640F Material Pb free Halogen free Halogen free Pb free Packing Tube Tube Tape & Reel Tube ABSOLUTE MAXIMUM RATING.


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