SVD50N06MJ

SVD50N06T/D/MJ_Datasheet 50A, 60V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD50N06T is an N-channel enhancement mode high voltage MOS field effect transistor which is produced using Silan new structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. It's widely used in electronic ballasts and low power SMPS. FEATURES ∗ 50A,60V,RDS(on)（typ）=18mΩ@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. SVD50N06T SVD50N06D SVD50N06DTR SVD50N06MJ Package TO-220-3L TO-252-2L TO-252-2L TO-251J-3L Marking SVD50N06T SVD50N06D SVD50N06D SVD50N06MJ Material Pb free Pb free Pb free Pb free Packing Tube Tube Tape & Reel Tube HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.1 2013...