SVD202

Ordering number : EN5769 Hyperabrupt Junction Type GaAs Varactor Diode SVD202 X Band VCO, PLO Features High Q. High capacitance ratio. Package Dimensions unit: mm 1274 [SVD202] 1 : Cathode 2 : Anode Specifications Absolute Maximum Ratings at Ta=25°C Parameter Peak Reverse Voltage Average Rectified Current Allowable Power Dissipation Junction Temperature Storage Temperature Mounting Temperature Symbol Vrm Ifm PD Tj Tstg Tm Conditions Ratings 30 50 500 150 –65 to +150 230/10s Unit V mA mW °C °C °C Electrical Characteristics at Ta=25°C Parameter Forward Voltage Reverse Voltage Reverse Current Interterminal Capacitance Capacitance Ratio Symbol VF VR IR Ct0V Cj0V / Cj25V IF=10mA IR=10µA VR=25V VR=0V, f=1MHz VR=0V, 25V, f=1MHz 9 11 11 14 –27 100 Conditions Ratings min typ max 1.4 Unit V V nA pF SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 90597GI (KOTO) No.5769-1/2 SVD202 Cj — Vr + Vbi 6 10.0 δCj — Ta f=1MHz Vr=1V Vbi=1.0V Junction Capacitance, Cj – pF Capacitance Ratio, δCj – % 4 2 3V 5V 10V 1.0 0 –2 10V 5V 3V 1V –50 –25 0 25 50 75 100 –4 0.1 1 10 –6 Reverse Voltage, Vr + Diffusion potential, Vbi – V Ambient Temperature, Ta – °C No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of whic...