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SUR70N02-04P
New Product
Vishay Siliconix
N-Channel 20-V (D-S) 175_C MOSFET
FEATURES PRODUCT SUMM...
www.DataSheet4U.com
SUR70N02-04P
New Product
Vishay Siliconix
N-Channel 20-V (D-S) 175_C
MOSFET
FEATURES PRODUCT SUMMARY
VDS (V)
20
rDS(on) (W)
0.0037 @ VGS = 10 V 0.0061 @ VGS = 4.5 V
ID (A)a
37 29
D D D D
TrenchFETr Power
MOSFET 175_C Junction Temperature PWM Optimized for High Efficiency 100% Rg Tested
APPLICATIONS
D Synchronous Buck Converter − Low Side D Synchronous Rectifier − Secondary Rectifier
TO-252 Reverse Lead DPAK
D
Drain Connected to Tab G D S
G
Top View Ordering Information: SUR70N02-04P—E3 SUR70N02-04P-T4—E3 (altrenate tape orientation) S N-Channel
MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Currenta Pulsed Drain Current Continuous Source Current (Diode Conduction)a Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range L = 0.1 0 1 mH TA = 25_C TC = 25_C TA = 25_C TC= 25_C
Symbol
VDS VGS ID IDM IS IAS EAS PD TJ, Tstg
Limit
20 "20 37a 70b 100 37 30 45 8.3a 93 −55 to 175
Unit
V
A
mJ W _C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction Junction-to-Ambient to Ambienta Maximum Junction-to-Case Notes a. Surface Mounted on FR4 Board, t v 10 sec. b. Limited by package Document Number: 72776 S-32697—Rev. A, 19-Jan-04 www.vishay.com t v 10 sec Steady State
Symbol
RthJA RthJC
Typical
15 40 1.3
Maximum
18 50 1.6
Unit
_C/W
1
SUR70N02-04P
Vishay Siliconix
New Product
SPECI...