SUR70N02-04P

www.DataSheet4U.com SUR70N02-04P New Product Vishay Siliconix N-Channel 20-V (D-S) 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) 0.0037 @ VGS = 10 V 0.0061 @ VGS = 4.5 V ID (A)a 37 29 D D D D TrenchFETr Power MOSFET 175_C Junction Temperature PWM Optimized for High Efficiency 100% Rg Tested APPLICATIONS D Synchronous Buck Converter − Low Side D Synchronous Rectifier − Secondary Rectifier TO-252 Reverse Lead DPAK D Drain Connected to Tab G D S G Top View Ordering Information: SUR70N02-04P—E3 SUR70N02-04P-T4—E3 (altrenate tape orientation) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Current Continuous Source Current (Diode Conduction)a Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range L = 0.1 0 1 mH TA = 25_C TC = 25_C TA = 25_C TC= 25_C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg Limit 20 "20 37a 70b 100 37 30 45 8.3a 93 −55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction Junction-to-Ambient to Ambienta Maximum Junction-to-Case Notes a. Surface Mounted on FR4 Board, t v 10 sec. b. Limited by package Document Number: 72776 S-32697—Rev. A, 19-Jan-04 www.vishay.com t v 10 sec Steady State Symbol RthJA RthJC Typical 15 40 1.3 Maximum 18 50 1.6 Unit _C/W 1 SUR70N02-04P Vishay Siliconix New Product SPECI...