SUD50P04-13L

SUD50P04-13L New Product Vishay Siliconix P-Channel 40-V (D-S), 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) −40 D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature ID (A) −60c −48 rDS(on) (W) 0.013 @ VGS = −10 V 0.022 @ VGS = −4.5 V APPLICATIONS D Automotive Such As: − High-Side Switch − Motor Drive − 12-V Boardnet TO-252 S G Drain Connected to Tab G D S D P-Channel MOSFET Top View Order Number: SUD50P04-13L—E3 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Currentb Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current Avalanche Energy Maximum Power Dissipationb Operating Junction and Storage Temperature Range TC = 25_C TA = 25_C TC = 25_C TC = 100_C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg Limit −40 "20 −60c −43 −100 −60c −40 80 93.7b 3a −55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction Junction-to-Ambient to Ambienta Maximum Junction-to-Case t v 10 sec. Steady State Symbol RthJA RthJC Typical 15 40 1.3 Maximum 18 50 1.6 Unit _C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. See SOA curve for voltage derating. c. Calculated based on maximum allowable Junction Temperature. Package limitation current is 50 A. Document Number: 73009 S-41267—Rev. A, 05-Jul-04 www.vishay.com 1 SUD50P04-13L Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Sour...