SUD50N03-10
Siliconix
N-Channel 30-V (D-S), 175_C MOSFET
Product Summary
VDS (V)
30
rDS(on) (W)
0.010 @ VGS = 10 V 0....
SUD50N03-10
Siliconix
N-Channel 30-V (D-S), 175_C
MOSFET
Product Summary
VDS (V)
30
rDS(on) (W)
0.010 @ VGS = 10 V 0.019 @ VGS = 4.5 V
ID (A)
"15 "12
D
TO-252
Drain Connected to Tab G D S
G
Top View Order Number: SUD50N03-10 S N-Channel
MOSFET
Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
Parameter
Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Currenta Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipation Operating Junction and Storage Temperature Range TC = 25_C TA = 25_C TA = 25_C TA = 100_C
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
Limit
30 "20 "15 "10 "100 15 83 4a –55 to 175
Unit
V
A
W _C
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambienta Maximum Junction-to-Case Notes a. Surface Mounted on FR4 Board, t v 10 sec.
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70265. Vishay-Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 S Phone (408)988-8000 S FaxBack (408)970-5600 S www.siliconix.com S-57253—Rev. E, 24-Feb-98 Siliconix was formerly a division of TEMIC Semiconductors
Symbol
RthJA RthJC
Typical
Maximum
30 1.8
Unit
_C/W
1
SUD50N03-10
Siliconix Specifications (TJ = 25_C Unless Otherwise Noted)
Parameter Static
Drain-Source Breakdown
Voltage Gate Threshold
Voltage Gate-Body Leakage Zero Gate
Voltage Drain Current On-State Drain Currentb V(BR)DSS VGS(th) IGSS IDSS ID(on) VGS = 0 V, ID =...
