SUD50N03-06P
Vishay Siliconix
N-Channel 30-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
VDS (V)
30
FEATURES
ID (A)b
84b 59b
r...
SUD50N03-06P
Vishay Siliconix
N-Channel 30-V (D-S) 175_C
MOSFET
PRODUCT SUMMARY
VDS (V)
30
FEATURES
ID (A)b
84b 59b
rDS(on) (W)
0.0065 @ VGS = 10 V 0.0095 @ VGS = 4.5 V
D TrenchFETr Power
MOSFET D 175_C Junction Temperature D Optimized for Low-Side Synchronous Rectifier Operation
APPLICATIONS
D DC/DC Converters D Synchronous Rectifiers
D
TO-252
G Drain Connected to Tab G D S
Top View Order Number: SUD50N03-06P S N-Channel
MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Currenta Pulsed Drain Current Continuous Source Current (Diode Conduction)a TC = 25_C Maximum Power Dissipation Operating Junction and Storage Temperature Range TA = 25_C PD TJ, Tstg TC = 25_C TC = 100_C ID IDM IS
Symbol
VDS VGS
Limit
30 "20 84b 59b 100 25 88 8.3a - 55 to 175
Unit
V
A
W _C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction Junction-to-Ambient to Ambienta Maximum Junction-to-Case Notes a. Surface Mounted on FR4 Board, t v 10 sec. b. Based on maximum allowable Junction Temperature, package limitation current is 50 A. Document Number: 71844 S-31268—Rev. B, 16-Jun-03 www.vishay.com t v 10 sec Steady State RthJA RthJC
Symbol
Typical
15 40 1.4
Maximum
18 50 1.7
Unit
_C/W
1
SUD50N03-06P
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Drain-Source Breakdown
Voltage Gate Threshold
Voltage Gate-Body Leakage Zero Gate
Voltage Drain Current On-State Drain Curre...