SUD50N024-09P

SUD50N024-09P Vishay Siliconix N-Channel 22-V (D-S) 175_C MOSFET PRODUCT SUMMARY VDS (V) 24c FEATURES ID (A)d 49 36 D rDS(on) (W) 0.0095 @ VGS = 10 V 0.017 @ VGS = 4.5 V D TrenchFETr Power MOSFET D 175_C Junction Temperature D PWM Optimized for High Efficiency APPLICATIONS D High-Side Synchronous Buck DC/DC Conversion − Desktop − Server TO-252 Drain Connected to Tab G D S G Top View S Ordering Information: SUD50N024-09P SUD50N024-09P—E3 (Lead Free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Pulse Voltage Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Current Continuous Source Current (Diode Conduction)a Avalanche Current, Single Pulse Avalanche Energy, Single Pulse Maximum Power Dissipation Operating Junction and Storage Temperature Range TA = 25_C TC = 25_C L = 0.1 mH TC = 25_C TC= 100_C Symbol VDS(pulse) VDS VGS ID IDM IS IAS EAS PD TJ, Tstg Limit 24C 22 "20 49d 34d 100 4.3 29 42 6.5a 39.5 −55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction Junction-to-Ambient to Ambienta Maximum Junction-to-Case t v 10 sec Steady State Symbol RthJA RthJC Typical 19 40 3.1 Maximum 23 50 3.8 Unit _C/W Notes a. Surface Mounted on FR4 Board, t v 10 sec. b. Limited by package c. Pulse condition: TA = 105_C, 50 ns, 300 kHz operation d. Calculation based on maximum allowable Junction Temperature. Package limitation current is 25 A. Document Number: 72290 S...