STY60NA20

® STY60NA20 N - CHANNEL 200V - 0.030Ω - 60 A - Max247 FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STY60NA20 s s V DSS 200 V R DS(on) < 0.032 Ω ID 60 A s s s s s s TYPICAL RDS(on) = 0.030 Ω EFFICIENT AND RELIABLE MOUNTING THROUGH CLIP ± 30V GATE TO SOURCE VOLTAGE RATING REPETITIVE AVALANCHE TESTED LOW INTRINSIC CAPACITANCE 100% AVALANCHE TESTED GATE CHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD TM 1 2 3 Max247TM DESCRIPTION T he Max247 package is a new high volume power package exibiting the same footprint as the industr y standard T O-247, but designed to accomodate much larger silicon chips, normally supplied in bigger packages such as T O-264. The increased die capacity makes the device ideal to reduce component count in multiple paralleled designs and save board space with respect to larger packages. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES (UPS) ABSOLUTE MAXIMUM RATINGS Symbol V DS VDGR V GS ID ID I DM ( ) P t ot Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω) Gate-source Voltage Drain Current (continuous) at T c = 25 oC Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at T c = 25 C Derating Factor T stg Tj St orage Temperature Max. Operating Junction T emperature o o Value 200 200 ± 30 60 40 240 300 2.4 -65 to 150 150 Uni t V V V A A A W...