STY15NA100
N - CHANNEL 1000V - 0.65 Ω - 15A - Max247 MOSFET
PRELIMINARY DATA TYPE STY15NA100
s s
V DSS 1000 V
R DS(on)...
STY15NA100
N - CHANNEL 1000V - 0.65 Ω - 15A - Max247
MOSFET
PRELIMINARY DATA TYPE STY15NA100
s s
V DSS 1000 V
R DS(on) < 0.77 Ω
ID 15 A
s s s s s s
TYPICAL RDS(on) = 0.65 Ω EFFICIENT AND RELIABLE MOUNTING THROUGH CLIP ± 30V GATE TO SOURCE
VOLTAGE RATING REPETITIVE AVALANCHE TESTED LOW INTRINSIC CAPACITANCE 100% AVALANCHE TESTED GATE CHARGE MINIMIZED REDUCED THRESHOLD
VOLTAGE SPREAD
2 1
3
Max247TM
DESCRIPTION
The Max247 TM package is a new high volume power package exibiting the same footprint as the industry standard TO-247, but designed to accomodate much larger silicon chips, normally supplied in bigger packages such as TO-264. The increased die capacity makes the device ideal to reduce component count in multiple paralleled designs and save board space with respect to larger packages.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES (UPS) ABSOLUTE MAXIMUM RATINGS
Symbol V DS VDGR V GS ID ID I DM ( ) P tot T stg Tj Parameter Drain-source
Voltage (V GS = 0) Drain- gate
Voltage (R GS = 20 k Ω ) Gate-source
Voltage Drain Current (continuous) at T c = 25 o C Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at T c = 25 C Derating Factor Storage Temperature Max. Operating Junction Temperature
o o
Value 1000 1000 ± 30 15 9.5 60 300 2.4 -55 to 150 150
Unit V V V A A A W W/ o C
o o
C C
() Pulse...