STW50N65DM2AG
Datasheet
Automotive-grade N-channel 650 V, 70 mΩ typ., 38 A Power MOSFET MDmesh DM2 in a TO-247 package
...
STW50N65DM2AG
Datasheet
Automotive-grade N-channel 650 V, 70 mΩ typ., 38 A Power
MOSFET MDmesh DM2 in a TO-247 package
Features
Order code STW50N65DM2AG
VDS 650 V
RDS(on) max. 87 mΩ
ID 38 A
3 2 1 TO-247
D(2, TAB)
AEC-Q101 qualified Fast-recovery body diode Extremely low gate charge and input capacitance Low on-resistance 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected
Applications
G(1)
Switching applications
S(3)
NG1D2TS3Z
Description
This high-
voltage N-channel Power
MOSFET is part of the MDmesh DM2 fastrecovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
Product status link STW50N65DM2AG
Product summary(1)
Order code
STW50N65DM2AG
Marking
50N65DM2
Package
TO-247
Packing
Tube
1. The HTRB test was performed at 80% V(BR)DSS in compliance with AEC-Q101 rev. C. All the other tests were performed according to rev. D.
DS11149 - Rev 3 - August 2020 For further information contact your local STMicroelectronics sales office.
www.st.com
STW50N65DM2AG
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
Gate-source
voltage (static) VGS
Gate-source
voltage (dynamic AC (f > 1 Hz))
Drain current (continuous) at TC = 25 °C ID
Drain current (continuous) at TC = 100 °C
IDM (1)
Drain current (pulse...
