STW38NB20

www.DataSheet4U.com STW38NB20 N - CHANNEL ENHANCEMENT MODE PowerMESH™ MOSFET PRELIMINARY DATA TYPE STW38NB20 s s s s s s s V DSS 200 V R DS(on) < 0.065 Ω ID 38 A TYPICAL RDS(on) = 0.052 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED LOW INTRINSIC CAPACITANCE GATE CHARGE MINIMIZED REDUCED VOLTAGE SPREAD TO-247 3 2 1 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLY (SMPS) s DC-AC CONVERTER FOR WELDING EQUIPMENT AND UNINTERRUPTABLE POWER SUPPLY AND MOTOR DRIVE s INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V DS VDGR V GS ID ID I DM ( ) P tot Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation at T c = 25 C Derating Factor dv/dt (1) T stg Tj Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature o o Value 200 200 ± 30 38 24 152 180 1.44 5.5 -65 to 150 150 (1) ISD ≤38 A, di/dt ≤ 200 A/µs, VD...