STW24NM65N

STW24NM65N-STI24NM65N-STF24NM65N STB24NM65N - STP24NM65N N-channel 650 V - 0.16 Ω - 19 A - TO-220 - TO-220FP - D2PAK I2PAK - TO-247 second generation MDmesh™ Power MOSFET Features www.DataSheet4U.com Type VDSS (@TJmax) 710 V 710 V 710 V 710 V 710 V RDS(on) max < 0.19 Ω < 0.19 Ω < 0.19 Ω < 0.19 Ω < 0.19 Ω ID 3 STB24NM65N STI24NM65N STF24NM65N STP24NM65N STW24NM65N 19 A 19 A 19 A(1) 19 A 19 A 1 2 3 12 TO-220 3 1 I²PAK D²PAK 3 1 2 1. Limited only by maximum temperature allowed ■ ■ ■ 2 1 3 100% avalanche tested Low input capacitance and gate charge Low gate input resistance TO-220FP TO-247 Figure 1. Internal schematic diagram Application ■ Switching applications Description This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Table 1. Device summary Order codes STB24NM65N STI24NM65N STF24NM65N STP24NM65N Marking 24NM65N 24NM65N 24NM65N 24NM65N 24NM65N Package D²PAK I²PAK TO-220FP TO-220 TO-247 Packaging Tape and reel Tube Tube Tube Tube STW24NM65N February 2008 Rev 1 1/19 www.st.com 19 Contents STB24NM65N-STI24NM65N-STF24NM65N-STP/W24NM65N Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteris...