N-CHANNEL 400V - 0.19 Ω - 18.4 A TO-247/ISOWATT218 PowerMesh™ MOSFET
TYPE STW18NB40 STH18NB40FI
s s s s s
STW18NB40 STH...
N-CHANNEL 400V - 0.19 Ω - 18.4 A TO-247/ISOWATT218 PowerMesh™
MOSFET
TYPE STW18NB40 STH18NB40FI
s s s s s
STW18NB40 STH18NB40FI
PRELIMINARY DATA
VDSS 400 V 400 V
RDS(on) < 0.26 Ω < 0.26 Ω
ID 18.4 A 12.4 A
TYPICAL RDS(on) = 0.19 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED TO-247
3 2 1
3 2 1
ISOWATT218
DESCRIPTION Using the latest high
voltage MESH OVERLAY ™ process, STMicroelectronics has designed an advanced family of power
MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest R DS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM (l) PTOT dv/dt (1) VISO Tstg Tj Parameter Drain-source
Voltage (VGS = 0) Drain-gate
Voltage (RGS = 20 kΩ) Gate- source
Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery
voltage slope Insulation Withstand
Voltage (DC) Storage Temperature Max. Operating Junction Temperature
INTERNAL SCHEMATIC DIAGRAM
Value STW18NB40 400 400 ±30 18.4 11.6 73.6 190 1.52 4.5...