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N-CHANNEL 600V - 0.5Ω - 12A TO-247 PowerMesh™II MOSFET
TYPE STW12NB60
s s s s s
STW12NB60
VDSS 60...
www.DataSheet4U.com
N-CHANNEL 600V - 0.5Ω - 12A TO-247 PowerMesh™II
MOSFET
TYPE STW12NB60
s s s s s
STW12NB60
VDSS 600V
RDS(on) < 0.6Ω
ID 12 A
TYPICAL RDS(on) = 0.5Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
1
3 2
DESCRIPTION Using the latest high
voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power
MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
TO-247
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM (q) PTOT dv/dt(1) Tstg Tj May 2001 Parameter Drain-source
Voltage (VGS = 0) Drain-gate
Voltage (RGS = 20 kΩ) Gate- source
Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery
voltage slope Storage Temperature Max. Operating Junction Temperature Value 600 600 ±30 12 7.56 48 190 1.52 4 –65 to 150 150
(1)ISD ≤12A, di/dt ≤100A/µs, V DD ≤ V(BR)DSS, Tj ≤ T JMAX.
Unit V V V A A A W W/°C V/ns °C °C 1/8
STW12NB60
THERMAL DATA
Rthj-case Rthj-amb Tl Ther...