STTH4R02
Ultrafast recovery diode
. $
$
$
. 60% .
. 60& .
1& $
1&
'3$.
$
Features
Negligible switching losse...
STTH4R02
Ultrafast recovery diode
. $
$
$
. 60% .
. 60& .
1& $
1&
'3$.
$
Features
Negligible switching losses High junction temperature Very low conduction losses Low forward and reverse recovery times ECOPACK®2 compliant component for DPAK
on demand
Datasheet production data
Description
The STTH4R02 uses ST's new 200 V planar Pt doping technology, and it is specially suited for switching mode base drive and transistor circuits.
Packaged in DPAK, SMB and SMC, this device is intended for use in low
voltage, high frequency inverters, freewheeling and polarity protection.
Table 1. Device summary
Symbol
Value
IF(AV) VRRM VF (typ) Tj (max) trr (typ)
4A 200 V 0.76 V 175 °C 16 ns
November 2016
This is information on a product in full production.
DocID12360 Rev 6
1/14
www.st.com
14
Characteristics
1 Characteristics
STTH4R02
Table 2. Absolute ratings (limiting values at 25 °C, unless otherwise specified)
Symbol
Parameter
Value
VRRM Repetitive peak reverse
voltage IF(RMS) Forward rms current
DPAK SMB / SMC
200 10 70
IF(AV)
IFSM Tstg Tj
Average forward current,
δ = 0.5, square wave
Surge non repetitive forward current
DPAK SMB / SMC tp = 10 ms sinusoidal
Tc = 160 °C TL = 95 °C
Storage temperature range
Maximum operating junction temperature
4
70 -65 to +175
175
Unit V A
A
A °C °C
Symbol
Rth(j-c) Rth(j-l)
Junction to case Junction to lead
Table 3. Thermal parameters Parameter
DPAK SMB / SMC
Max. value Unit
3.5 °C/W
20
Table 4. Stati...