STTH3006DPI

® STTH3006DPI Tandem 600V HYPERFAST BOOST DIODE MAJOR PRODUCTS CHARACTERISTICS IF(AV) 30 A VRRM 600 V Tj (max) 150 °C VF (max) 2.4 V IRM (typ.) 6.7 A trr (typ.) 25 ns FEATURES AND BENEFITS s ESPECIALLY SUITED AS BOOST DIODE IN CONTINUOUS MODE POWER FACTOR CORRECTORS AND HARD SWITCHING CONDITIONS s DESIGNED FOR HIGH dIF/dt OPERATION. HYPERFAST RECOVERY CURRENT TO COMPETE WITH SiC DEVICES. ALLOWS DOWNSIZING OF MOSFET AND HEATSINKS s INTERNAL CERAMIC INSULATED DEVICES WITH EQUAL THERMAL CONDITIONS FOR BOTH 300V DIODES s INSULATION (2500VRMS) ALLOWS PLACEMENT ON SAME HEATSINK AS MOSFET FLEXIBLE HEATSINKING ON COMMON OR SEPARATE HEATSINK. s STATIC AND DYNAMIC EQUILIBRIUM OF INTERNAL DIODES ARE WARRANTED BY DESIGN s PACKAGE CAPACITANCE: C=16pF 1 2 2 1 DOP3I (insulated) DESCRIPTION The TURBOSWITCH “H” is an ultra high performance diode composed of two 300V dice in series. TURBOSWITCH “H” family drastically cuts losses in the associated MOSFET when run at high dIF/dt. ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 600 V IF(RMS) RMS forward current 32 A IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 180 A Ipeak Peak current waveform δ = 0.15 Tc = 120°C 50 A Tstg Storage temperature range -65 +150 °C Tj Maximum operating junction temperature + 150 °C October 2003 - Ed: 2A 1/5 STTH3006DPI THERMAL AND POWER DATA Symbol Parameter Rth (j-c) Junction to case the...