STT5PF20V

www.DataSheet4U.com STT5PF20V P-CHANNEL 20V - 0.065Ω - 5A SOT23-6L 2.5V-DRIVE STripFET™ II POWER MOSFET TYPE STT5PF20V s s s s VDSS 20 V RDS(on) < 0.080 Ω (@4.5V) < 0.10 Ω (@2.5V) ID 5A TYPICAL RDS(on) = 0.065Ω (@4.5V) TYPICAL RDS(on) = 0.085Ω (@2.5V) ULTRA LOW THRESHOLD GATE DRIVE (2.5V) STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY SOT23-6L DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s MOBILE PHONE APPLICATIONS s DC-DC CONVERTERS s BATTERY MANAGEMENT IN NOMADIC EQUIPMENT ORDERING INFORMATION SALES TYPE STT5PF20V MARKING STPN PACKAGE SOT23-6L PACKAGING TAPE & REEL October 2003 1/8 STT5PF20V ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM ( ) PTOT Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Value 20 20 ±8 5 3.1 20 1.6 Unit V V V A A A W ( ) Pulse width limited by safe operating area Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed THERMAL DATA Rthj-amb Tj Tstg Thermal Resistance Junction-ambient Max Max. Operating Junction Temperature Storage Temperature 78 150 –55 to 150 °C/W °C °C ELECTRICAL CHARACTERISTICS (T...