STT2603
Elektronische Bauelemente
RoHS Compliant Product
-5A, -20V,RDS(ON) 65m £[
P-Channel Enhancement Mode Power Mos...
STT2603
Elektronische Bauelemente
RoHS Compliant Product
-5A, -20V,RDS(ON) 65m £[
P-Channel Enhancement Mode Power Mos.FET
Description
The STT2603 utilized advanced processing techniques to achieve the lowest
possible on-resistance, extremely efficient and cost-effectiveness device. The STT2603 is universally used for all commercial industrial surface mount application .
Features
* Small package outline * Simple drive requirement
D
D 6
D 5
S 4
REF. A A1 A2 c D E E1
G
Date Code 1 D
2603
2 D 3 G
S
Millimeter Min. Max. 1.10 MAX. 0 0.10 0.70 1.00 0.12 REF. 2.70 3.10 2.60 3.00 1.40 1.80
REF. L L1 b e e1
Millimeter Min. Max. 0.45 REF. 0.60 REF. 0° 10° 0.30 0.50 0.95 REF. 1.90 REF.
Absolute Maximum Ratings
Parameter
Drain-Source
Voltage Gate-Source
Voltage www.DataSheet4U.com Continuous Drain Current (Note 3) Continuous Drain Current (Note 3) Pulsed Drain Current (Note 1,2) Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg
Symbol
VDS VGS ID@TA=25к ID@TA=70к IDM PD@TA=25к
Ratings
-20
±12 -5 -4 -20 2 0.016 -55~+150
Unit
V V A A A W
W /e C e C
Thermal Data
Parameter
Thermal Resistance Junction-ambient (Note 3) (Max)
Symbol
Rthj-a
Ratings
62.5
Unit
e C /W
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 4
STT2603
Elektronische Bauelemente -5A, -20V,RDS(ON) 65m£[ P-Channel Enhancement Mode Power Mos.FET
o
Electrical Characteristics( Tj=...