Dual N-Channel E nhancement Mode Field Effect Transistor
Description
www.DataSheet4U.com
S T S 8208
S amHop Microelectronics C orp. J an. 03 2006
Dual N-C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V DS S
20V
F E AT UR E S
( mW ) Max
ID
5A
R DS (ON)
S uper high dense cell design for low R DS (ON ).
27 @ V G S = 4.0V 40 @ V G S = 2.5V
R ugged and reliable. S urface Mount P ackage. E S D P ro...
