Dual N-Channel E nhancement Mode Field Effect Transistor
Description
www.DataSheet4U.com
S T S 8205
S amHop Microelectronics C orp. J un,08 2005 ver 1.4
Dual N-C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V DS S
20V
F E AT UR E S
( mW ) Max
ID
4A
R DS (ON)
S uper high dense cell design for low R DS (ON ).
30 @ V G S = 4.0V 46 @ V G S = 2.5V
R ugged and reliable. S urface Mount P ackage.
D1 ...
