STS4DPFS30L

P-CHANNEL 30V - 0.07Ω - 4A SO-8 STripFET™ MOSFET PLUS SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS MOSFET VDSS 30 V SCHOTTKY IF(AV) 3A RDS(on) < 0.08 Ω VRRM 30 V ID 4A VF(MAX) 0.51 V STS4DPFS30L SO-8 DESCRIPTION This product associates the latest low voltage STripFET™ in p-channel version to a low drop Schottky diode. Such configuration is extremely versatile in implementing, a large variety of DC-DC converters for printers, portable equipment, and cellular phones. INTERNAL SCHEMATIC DIAGRAM MOSFET ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (q) PTOT Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Value 30 30 ± 20 4 3.4 16 1.6 Unit V V V A A A W SCHOTTKY ABSOLUTE MAXIMUM RATINGS Symbol VRRM IF(RMS) IF(AV) IFSM IRRM IRSM Parameter Repetitive Peak Reverse Voltage RMS Forward Current Average Forward Current Surge Non Repetitive Forward Current Repetitive Peak Reverse Current Non Repetitive Peak Reverse Current TL = 125°C δ = 0.5 tp = 10 ms Sinusoidal tp = 2 µs F = 1 kHz tp = 100 µs Value 30 20 3 75 1 1 Unit V A A A A A 1/8 dv/dt Critical Rate Of Rise Of Reverse Voltage October 2000 Note: For the P-CHANNEL 10000 MOSFET actual polarity of Voltages V/µs and current has to be reversed STS4DPFS30L THERMAL DATA Rthj-amb Rthj-amb Tstg Tl (*)Thermal Resistance Junction-ambient MOSFET (*)...