STS4DPFS2LS

P-CHANNEL 20V - 0.06Ω - 4A SO-8 STripFET™ MOSFET PLUS SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS MOSFET VDSS 20 V SCHOTTKY IF(AV) 3A RDS(on) < 0.07 Ω VRRM 40 V ID 4A VF(MAX) 0.44 V STS4DPFS2LS SO-8 DESCRIPTION This product associates the latest low voltage STripFET™ in p-channel version to a low drop Schottky diode. Such configuration is extremely versatile in implementing, a large variety of DC-DC converters for printers, portable equipment, and cellular phones. INTERNAL SCHEMATIC DIAGRAM MOSFET ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (q) PTOT EAS (1) Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Single Pulse Avalanche Energy Value 20 20 ± 20 4 3.4 16 2 20 Unit V V V A A A W mJ SCHOTTKY ABSOLUTE MAXIMUM RATINGS Symbol VRRM IF(RMS) IF(AV) IFSM IRRM dv/dt Parameter Repetitive Peak Reverse Voltage RMS Forward Current Average Forward Current Surge Non Repetitive Forward Current Repetitive Peak Reverse Current Critical Rate Of Rise Of Reverse Voltage TL = 120°C δ = 0.5 tp = 10 ms Sinusoidal tp = 2 µs F = 1 kHz Value 40 10 3 75 1 10000 Unit V A A A A V/µs ()Pulse width limited by safe operating area (1) Starting Tj = 25°C, I D = 2.5 A, VDD = 20 V Note: For the P-CHANNEL MOSFET actual polarity of Voltages and current has to be reversed February 2001 1/8 STS4DPFS2LS THERMA...