STS4C3F60L

STS4C3F60L N-CHANNEL 60V - 0.045 Ω - 4A SO-8 P-CHANNEL 60V - 0.100 Ω - 3A SO-8 StripFET™ MOSFET Table 1: General Features TYPE STS4C3F60L (N-Channel) STS4C3F60L (P-Channel) s s s Figure 1: Package RDS(on) < 0.055 Ω < 0.120 Ω ID 4A 3A VDSS 60 V 60 V s TYPICAL RDS(on) (N-Channel) = 0.045 Ω TYPICAL RDS(on) (P-Channel) = 0.100 Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE SO-8 DESCRIPTION This MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Figure 2: Internal Schematic Diagram APPLICATIONS s DC/DC CONVERTERS s BACK LIGHT INVERTER FOR LCD Table 2: Order Codes PART NUMBER STS4C3F60L MARKING S4C3F60L PACKAGE SO-8 PACKAGING TAPE & REEL Rev. 2 September 2004 1/11 STS4C3F60L Table 3: Absolute Maximum ratings Symbol VDS VDGR VGS ID ID IDM ( ) PTOT Tj Tstg Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate-source Voltage Drain Current (continuous) at TC = 25°C Single Operating Drain Current (continuous) at TC = 100°C Single Operating Drain Current (pulsed) Total Dissipation at TC = 25°C Operating Junction Temperature Storage Temperature 4 2.5 16 2 -55 to 150 Value N-CHANNEL 60 60 ± 16 3 1.9 12 P-CHANNEL V V V A A A W °C Unit ( ) Pulse width limited by safe ...