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STS3411A Datasheet

Part Number STS3411A
Manufacturers SamHop Microelectronics
Logo SamHop Microelectronics
Description P-Channel Enhancement Mode Field Effect Transistor
Datasheet STS3411A DatasheetSTS3411A Datasheet (PDF)

STS3411AGreen Product Sa mHop Microelectronics C orp. P-Channel Enhancement Mode Field Effect Transistor Ver 1.0 PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Max -30V -3.6A 52 @ VGS=-10V 65 @ VGS=-4.5V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. S OT-23 D S G D G S ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous a c ID.

  STS3411A   STS3411A






P-Channel Enhancement Mode Field Effect Transistor

STS3411AGreen Product Sa mHop Microelectronics C orp. P-Channel Enhancement Mode Field Effect Transistor Ver 1.0 PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Max -30V -3.6A 52 @ VGS=-10V 65 @ VGS=-4.5V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. S OT-23 D S G D G S ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous a c IDM -Pulsed c TA=25°C TA=70°C PD Maximum Power Dissipation a TA=25°C TA=70°C TJ, TSTG Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a Limit -30 ±20 -3.6 -2.9 -21 1.25 0.8 -55 to 150 100 Units V V A A A W W °C °C/W Details are subject to change without notice. 1 Jan,13,2014 www.samhop.com.tw STS3411A Ver 1.0 ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) Symbol Parameter Conditions Min.


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