STRH12P10ESY3

STRH12P10ESY3 P-channel 100V - 0.265Ω - TO-257AA Rad-hard low gate charge STripFET™ Power MOSFET General features Type STRH12P10ESY3 ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ www.DataSheet4U.com VDSS 100V Low RDS(on) Fast switching Single event effect (SEE) hardned Low total gate charge Light weight 100% avalanche tested Application oriented characterization Hermetically sealed Heavy ion SOA 100kRad TID SEL & SEGR with 34Mev/cm²/mg LET ions TO-257AA Internal schematic diagram ■ Description This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to sustain high TID and provide immunity to heavy ion effects. It is therefore suitable as power switch in mainly highefficiency DC-DC converters. It is also intended for any application with low gate charge drive requirements. Application ■ ■ Satellite High reliability Order codes Part number STRH12P10ESY1 STRH12P10ESY3 1. Mil temp range 2. Space flights parts (full ESA flow screening) (1) (2) Marking RH12P10ESY1 RH12P10ESY3 Package TO-257AA TO-257AA Packaging Individual strip pack Individual strip pack March 2007 Rev 2 1/12 www.st.com 12 Contents STRH12P10ESY3 Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 2.2 2.3 Pre-irradiation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....