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STPSC606 Datasheet

Part Number STPSC606
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description Schottky Barrier 600 V power Schottky silicon carbide diode
Datasheet STPSC606 DatasheetSTPSC606 Datasheet (PDF)

www.DataSheet4U.com STPSC606 600 V power Schottky silicon carbide diode Features ■ ■ ■ No or negligible reverse recovery Switching behavior independent of temperature Dedicated to PFC boost diode K A K Description The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide bandgap material allows the design of a Schottky diode structure with a 600 V rating. Due to the Schottky construction no recovery is shown at turn-off an.

  STPSC606   STPSC606






Schottky Barrier 600 V power Schottky silicon carbide diode

www.DataSheet4U.com STPSC606 600 V power Schottky silicon carbide diode Features ■ ■ ■ No or negligible reverse recovery Switching behavior independent of temperature Dedicated to PFC boost diode K A K Description The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide bandgap material allows the design of a Schottky diode structure with a 600 V rating. Due to the Schottky construction no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. ST SiC diodes will boost the performance of PFC operations in hard switching conditions. TO-220AC STPSC606D K A NC D2PAK STPSC606G Table 1. Device summary IF(AV) VRRM Tj (max) QC (typ) 6A 600 V 175 °C 6 nC September 2009 Doc ID 16284 Rev 1 1/8 www.st.com 8 Characteristics www.DataSheet4U.com STPSC606 1 Characteristics Table 2. Symbol VRRM IF(AV) IFSM IFRM Tstg Tj Absolute ratings (limiting values at 25 °C unless otherwise specified) Parameter Repetitive peak reverse voltage Average forward current Surge non repetitive forward current Repetitive peak forward current Storage temperature range Operating junction temperature range Tc = 125 °C, δ = 0.5 tp = 10 ms sinusoidal, Tc = 25 °C tp = 10 ms sinusoidal, Tc = 125 °C tp = 10 µs square, Tc = 25 °C δ = 0.1, Tc = 110 °C, Tj = 150 °C Value 600 18 6 27 22 110 27 -55 to +175 -40 to +175 Unit V A A IF(RMS) Forward rms curren.


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