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STPS80L15CY

ST Microelectronics

LOW DROP OR-ing POWER SCHOTTKY RECTIFIER

www.DataSheet4U.com ® STPS80L15CY LOW DROP OR-ing POWER SCHOTTKY RECTIFIER PRELIMINARY DATASHEET MAIN PRODUCT CHARACT...


ST Microelectronics

STPS80L15CY

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www.DataSheet4U.com ® STPS80L15CY LOW DROP OR-ing POWER SCHOTTKY RECTIFIER PRELIMINARY DATASHEET MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) 2 x 40 A 15 V 125 °C 0.33 V A1 K A2 FEATURES AND BENEFITS Max247 PACKAGE, DUAL DIODE CONSTRUCTION, 2 x 40A 15V BLOCKING VOLTAGE SUITABLE FOR 5V AND 12V OR-ing EXTREMELY LOW VOLTAGE VOLTAGE DROP: 0.33V @ 100 °C OPERATING JUNCTION TEMPERATURE: 125 °C K A1 A2 Max247 DESCRIPTION The STPS80L15CY uses proprietary barrier technology to optimize forward voltage drop for OR-ing functions in n-1 fault tolerant Switch Mode Power Supplies. ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) IFSM IRRM Tstg Tj dV/dt Parameter Repetitive peak reverse voltage RMS forward current Average forward current Surge non repetitive forward current Repetitive peak reverse current Storage temperature range Maximum operating junction temperature Critical rate of rise of reverse voltage Tc = 110 °C δ = 0.5 Per diode Per device Value 15 50 40 80 400 2 - 65 to + 150 125 10000 Unit V A A A A °C °C V/µs 1/4 tp = 10 ms sinusoidal tp = 2 µs F = 1kHz square November 1999 - Ed: 4B DataSheet 4 U .com www.DataSheet4U.com STPS80L15CY THERMAL RESISTANCES Symbol Rth (j-c) Rth (c) Junction to case Parameter Per diode Total Coupling Value 0.7 0.5 0.3 Unit °C/W When the diodes 1 and 2 are used simultaneously: ∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol IR...




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