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STP8NM60N Datasheet

Part Number STP8NM60N
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description N-channel Power MOSFET
Datasheet STP8NM60N DatasheetSTP8NM60N Datasheet (PDF)

STD8NM60N - STD8NM60N-1 STF8NM60N - STP8NM60N N-channel 600 V - 0.56 Ω - 7 A - TO-220 - TO-220FP - IPAK - DPAK second generation MDmesh™ Power MOSFET Features www.DataSheet4U.com Type VDSS (@Tjmax) 650 V 650 V 650 V 650 V RDS(on) max <0.65 Ω <0.65 Ω <0.65 Ω <0.65 Ω ID 3 3 2 1 1 2 STD8NM60N STD8NM60N-1 STF8NM60N STP8NM60N 7A 7A 7 A(1) 7A IPAK TO-220 1. Limited only by maximum temperature allowed ■ ■ ■ 3 1 1 3 2 100% avalanche tested Low input capacitance and gate charge Low gate input.

  STP8NM60N   STP8NM60N






Part Number STP8NM60ND
Manufacturers INCHANGE
Logo INCHANGE
Description N-Channel MOSFET
Datasheet STP8NM60N DatasheetSTP8NM60ND Datasheet (PDF)

isc N-Channel MOSFET Transistor STP8NM60ND FEATURES ·Drain Current –ID= 7A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.7Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuo.

  STP8NM60N   STP8NM60N







Part Number STP8NM60ND
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description Power MOSFET
Datasheet STP8NM60N DatasheetSTP8NM60ND Datasheet (PDF)

STD8NM60ND, STF8NM60ND STP8NM60ND, STU8NM60ND N-channel 600 V, 0.59 Ω , 7 A, FDmesh™ II Power MOSFET TO-220, TO-220FP, IPAK, DPAK Features Type STD8NM60ND STF8NM60ND STP8NM60ND STU8NM60ND VDSS (@Tjmax) 650 V 650 V 650 V 650 V RDS(on) max < 0.70 Ω < 0.70 Ω < 0.70 Ω < 0.70 Ω ID 3 3 2 1 1 2 7A 7A 7 A(1) 7A IPAK TO-220 1. Limited only by maximum temperature allowed ■ ■ ■ ■ ■ 3 1 3 1 2 The worldwide best RDS(on)* area amongst the fast recovery diode devices 100% avalanche tested Low input capa.

  STP8NM60N   STP8NM60N







Part Number STP8NM60FP
Manufacturers INCHANGE
Logo INCHANGE
Description N-Channel MOSFET
Datasheet STP8NM60N DatasheetSTP8NM60FP Datasheet (PDF)

isc N-Channel MOSFET Transistor STP8NM60FP FEATURES ·Drain Current –ID= 8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous.

  STP8NM60N   STP8NM60N







Part Number STP8NM60FP
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description N-CHANNEL MOSFET
Datasheet STP8NM60N DatasheetSTP8NM60FP Datasheet (PDF)

STP8NM60 - STP8NM60FP STB8NM60 - STD5NM60 - STD5NM60-1 N-CHANNEL [email protected]Ω-8A TO-220/FP/D/IPAK/D²PAK STripFET™ II MOSFET Table 1: General Features TYPE STP8NM60 STP8NM60FP STD5NM60 STD5NM60-1 STB8NM60 s s s s Figure 1: Package ID 8A 8 A(*) 5A 5A 5A Pw 100 W 30 W 96 W 96 W 96 W 1Ω 1Ω 1Ω 1Ω 1Ω VDSS 650 V 650 V 650 V 650 V 650 V RDS(on) < < < < < 3 1 2 s TYPICAL RDS(on) = 0.9 Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INP.

  STP8NM60N   STP8NM60N







N-channel Power MOSFET

STD8NM60N - STD8NM60N-1 STF8NM60N - STP8NM60N N-channel 600 V - 0.56 Ω - 7 A - TO-220 - TO-220FP - IPAK - DPAK second generation MDmesh™ Power MOSFET Features www.DataSheet4U.com Type VDSS (@Tjmax) 650 V 650 V 650 V 650 V RDS(on) max <0.65 Ω <0.65 Ω <0.65 Ω <0.65 Ω ID 3 3 2 1 1 2 STD8NM60N STD8NM60N-1 STF8NM60N STP8NM60N 7A 7A 7 A(1) 7A IPAK TO-220 1. Limited only by maximum temperature allowed ■ ■ ■ 3 1 1 3 2 100% avalanche tested Low input capacitance and gate charge Low gate input resistance DPAK TO-220FP Application ■ Figure 1. Internal schematic diagram Switching applications Description This series of devices implements second generation MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Table 1. Device summary Marking D8NM60N D8NM60N-1 F8NM60N P8NM60N Package DPAK IPAK TO-220FP TO-220 Packaging Tape & reel Tube Tube Tube Order code STD8NM60N STD8NM60N-1 STF8NM60N STP8NM60N January 2008 Rev 2 1/17 www.st.com 17 Contents STD8NM60N - STD8NM60N-1 - STF8NM60N - STP8NM60N Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) .


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