Isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
STP8N65M5
·FEATURES ·Higher VDSS rating ·Excellent switching pe...
Isc N-Channel
MOSFET Transistor
INCHANGE Semiconductor
STP8N65M5
·FEATURES ·Higher VDSS rating ·Excellent switching performance ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source
Voltage
650
VGSS ID IDM
Gate-Source
Voltage
Drain Current-Continuous@TC=25℃ TC=100℃
Drain Current-Single Pulsed
±25
7.0 4.4
28
PD
Total Dissipation
70
Tj
Max. Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
MAX 1.79 62.5
UNIT ℃/W ℃/W
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Isc N-Channel
MOSFET Transistor
INCHANGE Semiconductor
STP8N65M5
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown
Voltage VGS=0V; ID= 1mA
650
VGS(th)
Gate Threshold
Voltage
VDS=±25V; ID=0.25mA
3
RDS(on)
Drain-Source On-Resistance
VGS= 10V; ID=3.5A
IGSS
Gate-Source Leakage Current
VGS= ±25V;VDS= 0V
IDSS
Drain-Source Leakage Current
VDS= 650V; VGS= 0V;TJ=25℃ TJ=125℃
VSD
Diode forward
voltage
ISD=7A, VGS = 0 V
V
5
V
0.6
Ω
±0.1 μA
1 100
μA
1.5
V
NOTICE： ISC reserves the rights to make changes of the conten...
