STP75NE75

® STP75NE75 STP75NE75FP N - CHANNEL 75V - 0.01Ω - 75A TO-220/TO-220FP STripFET™ POWER MOSFET TYPE STP75NE75 STP75NE75FP s s s s V DSS 75 V 75 V R DS(on) < 0.013 Ω < 0.013 Ω ID 75 A 40 A TYPICAL RDS(on) = 0.01 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION 3 1 2 3 1 2 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s SOLENOID AND RELAY DRIVERS s DC MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC CONVERTERS s AUTOMOTIVE ENVIRONMENT TO-220 TO-220FP INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS ID ID I DM ( ) P tot V ISO dv/dt Ts tg Tj May 1999 Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (RGS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 o C Drain Current (continuous) at T c = 100 oC Drain Current (pulsed) Total Dissipation at T c = 25 oC Derating F actor Insulation Withstand Voltage (DC) Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature 75 53 300 160 1.06  7 -65 to 175 175 ( 1) ISD ≤75 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX Value STP75NE75 STP75NE75FP 75 75 ± 20 40 28 160 50 0.37 2000 Un it V V V A A A W W /o C V V/n...