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STP6N60FI
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
TYPE STP6N60FI
s s s s s
VDSS 600 V
R DS(on) < 1.2 Ω
ID 3.8 A
TYPICAL RDS(on) = 1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED CHARACTERIZATION
3 1 2
APPLICATIONS s HIGH CURRENT, HIGH SPEED SWIT...
