N-CHANNEL 650V - 1.5Ω - 5A TO-220 Zener-Protected SuperMESH™Power MOSFET
TYPE STP5NK65Z
s
STP5NK65Z
VDSS 650 V
RDS(on...
N-CHANNEL 650V - 1.5Ω - 5A TO-220 Zener-Protected SuperMESH™Power
MOSFET
TYPE STP5NK65Z
s
STP5NK65Z
VDSS 650 V
RDS(on) < 1.8 Ω
ID 5A
Pw 85 W
TYPICAL RDS(on) = 1.5 Ω s EXTREMELY HIGH dv/dt CAPABILITY s IMPROVED ESD CAPABILITY s 100% AVALANCHE RATED s GATE CHARGE MINIMIZED www.DataSheet4U.com s VERY LOW INTRINSIC CAPACITANCES s VERY GOOD MANUFACTURING REPEATIBILITY
TO-220
DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high
voltage MOSFETs including revolutionary MDmesh™ products.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC
ORDERING INFORMATION
SALES TYPE STP5NK65Z MARKING P5NK65Z PACKAGE TO-220 PACKAGING TUBE
April 2002
1/9
STP5NK65Z
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM (l) PTOT VESD(G-S) dv/dt (1) Tj www.DataSheet4U.com Tstg Parameter Drain-source
Voltage (VGS = 0) Drain-gate
Voltage (RGS = 20 kΩ) Gate- source
Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate source ESD(HBM-C=100pF, R=1.5KΩ) Peak Diode Recovery
voltage slope Operating Junction Temperature Storage Temperat...
