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STP45N10FI Datasheet

Part Number STP45N10FI
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description N-Channel Power MOS Transistor
Datasheet STP45N10FI DatasheetSTP45N10FI Datasheet (PDF)

www.DataSheet4U.com ® STP45N10 STP45N10FI N - CHANNEL 100V - 0.027Ω - 45A - TO-220/TO-220FI POWER MOS TRANSISTOR TYPE STP45N10 STP45N10FI V DSS 100 V 100 V R DS(on) < 0.035 Ω < 0.035 Ω ID 45 A 24 A s s s s s s s s TYPICAL RDS(on) = 0.027 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 175 oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION 3 1 2 1 2 3 TO-220 ISOWATT220 APPLICATIONS HIGH CURRENT, H.

  STP45N10FI   STP45N10FI






Part Number STP45N10F7
Manufacturers INCHANGE
Logo INCHANGE
Description N-Channel MOSFET
Datasheet STP45N10FI DatasheetSTP45N10F7 Datasheet (PDF)

Isc N-Channel MOSFET Transistor STP45N10F7 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤18mΩ ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGSS Gate-Source Voltage ±20 ID Drain Current-Continuous@TC=25℃ 45 IDM Drain Current-Single Pulsed 180 PD Total Dissipation 60 Tj Operating Ju.

  STP45N10FI   STP45N10FI







Part Number STP45N10F7
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description N-CHANNEL POWER MOSFET
Datasheet STP45N10FI DatasheetSTP45N10F7 Datasheet (PDF)

STD45N10F7, STI45N10F7, STP45N10F7 N-channel 100 V, 0.0145 Ω typ., 45 A, STripFET™ VII DeepGATE™ Power MOSFETs in DPAK, I2PAK and TO-220 packages Datasheet - production data TAB 3 1 DPAK TAB TAB 123 I2PAK 3 2 1 TO-220 Figure 1. Internal schematic diagram $ 4!" ' Features Order codes STD45N10F7 STI45N10F7 STP45N10F7 VDS RDS(on) max.(1) 100 V 0.018 Ω 1. @ VGS = 10 V • Ultra low on-resistance • 100% avalanche tested ID 45 A PTOT 60 W Applications • Switching applications Descri.

  STP45N10FI   STP45N10FI







N-Channel Power MOS Transistor

www.DataSheet4U.com ® STP45N10 STP45N10FI N - CHANNEL 100V - 0.027Ω - 45A - TO-220/TO-220FI POWER MOS TRANSISTOR TYPE STP45N10 STP45N10FI V DSS 100 V 100 V R DS(on) < 0.035 Ω < 0.035 Ω ID 45 A 24 A s s s s s s s s TYPICAL RDS(on) = 0.027 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 175 oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION 3 1 2 1 2 3 TO-220 ISOWATT220 APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s DC-DC & DC-AC CONVERTERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMP DRIVERS. Etc.) s www.DataSheet4U.com INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter STP45N10 V DS V DGR V GS ID ID IDM ( • ) P tot V ISO T stg Tj June 1998 Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at T c = 25 o C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature o o Value STP45N10FI 100 100 ± 25 45 32 180 150 1  -65 to 175 175 24 17 180 45 0.3 2000 Unit V V V A A A W W/ o C V o o C C 1/10 DataSheet 4 U .com www.DataSheet4U www.DataSheet4U.com 4U.com www.DataSheet4U.com STP45N10/FI THERMAL DATA TO220 R thj-case R thj-amb R thc-sink Tl Thermal Resistance Junction-case Max 1 62.5 0.5 300 ISOWATT220 3.3.


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