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STP438A Datasheet

Part Number STP438A
Manufacturers SamHop Microelectronics
Logo SamHop Microelectronics
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet STP438A DatasheetSTP438A Datasheet (PDF)

STB/P438AGreen Product Sa mHop Microelectronics C orp. N-Channel Logic Level Enhancement Mode Field Effect Transistor Ver 1.0 PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Max 8.5 @ VGS=10V 40V 60A 11 @ VGS=4.5V FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. D GS S TB S E R IE S T O -263(DD-P AK ) G D S S TP S E R IE S TO-220 ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Symbol Parameter Limit .

  STP438A   STP438A






Part Number STP438S
Manufacturers SamHop Microelectronics
Logo SamHop Microelectronics
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet STP438A DatasheetSTP438S Datasheet (PDF)

STB/P438SGreen Product Sa mHop Microelectronics C orp. N-Channel Logic Level Enhancement Mode Field Effect Transistor Ver1.0 PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Max 9 @ VGS=10V 40V 60A 10 @ VGS=4.5V FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. D GS S TB S E R IE S T O -263(DD-P AK ) G D S S TP S E R IE S TO-220 ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Symbol Parameter Limit VD.

  STP438A   STP438A







N-Channel Enhancement Mode Field Effect Transistor

STB/P438AGreen Product Sa mHop Microelectronics C orp. N-Channel Logic Level Enhancement Mode Field Effect Transistor Ver 1.0 PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Max 8.5 @ VGS=10V 40V 60A 11 @ VGS=4.5V FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. D GS S TB S E R IE S T O -263(DD-P AK ) G D S S TP S E R IE S TO-220 ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Symbol Parameter Limit VDS Drain-Source Voltage VGS Gate-Source Voltage 40 ±20 ID Drain Current-Continuous a TC=25°C TC=70°C 60 48 IDM -Pulsed b EAS Single Pulse Avalanche Energy d 177 196 PD Maximum Power Dissipation a TC=25°C TC=70°C 62.5 40 TJ, TSTG Operating Junction and Storage Temperature Range -55 to 150 THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case a R JA Thermal Resistance, Junction-to-Ambient a 2 50 Units V V A A A mJ W W °C °C/W °C/W Aug,02,2010 1 www.sa.


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