STP40N10 STP40N10FI
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
TYPE
STP40N10 STP40N10FI
VDSS
100 V 100 V
R DS( on)
< 0.04 Ω < 0.04 Ω
ID
40 A 22 A
s TYPICAL RDS(on) = 0.035 Ω s AVALANCHE RUGGED TECHNOLOGY s 100% AVALANCHE TESTED s REPETITIVE AVALANCHE DATA AT 100oC s LOW GATE CHARGE s HIGH CURRENT CAPABILITY s 175oC OPERATING TEMPERATURE s APPLICA...
