STP3NK90Z
Datasheet
N-channel 900 V, 3.6 Ω typ., 3 A SuperMESH Power MOSFET in a TO-220 package
Features
TAB
TO-220
1 23
Order code
VDS
RDS(on) max.
ID
STP3NK90Z
900 V
4.8 Ω
3A
• 100% avalanche tested • Gate charge minimized • Very low intrinsic capacitance • Zener-protected
D(2, TAB)
Applications
• Switching applications
G(1)
Description
This high-voltage device is a Zener-protected N-channel Power MOSFET developed
S(3)
using the SuperMESH technology by STMicroelectronics, an.
N-Channel MOSFET
STP3NK90Z
Datasheet
N-channel 900 V, 3.6 Ω typ., 3 A SuperMESH Power MOSFET in a TO-220 package
Features
TAB
TO-220
1 23
Order code
VDS
RDS(on) max.
ID
STP3NK90Z
900 V
4.8 Ω
3A
• 100% avalanche tested • Gate charge minimized • Very low intrinsic capacitance • Zener-protected
D(2, TAB)
Applications
• Switching applications
G(1)
Description
This high-voltage device is a Zener-protected N-channel Power MOSFET developed
S(3)
using the SuperMESH technology by STMicroelectronics, an optimization of the well-
AM01476v1_tab established PowerMESH. In addition to a significant reduction in on-resistance, this
device is designed to ensure a high level of dv/dt capability for the most demanding
applications.
Product status link STP3NK90Z
Product summary
Order code
STP3NK90Z
Marking
P3NK90Z
Package
TO-220
Packing
Tube
DS14416 - Rev 1 - August 2023 For further information contact your local STMicroelectronics sales office.
www.st.com
STP3NK90Z
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS
Drain-source voltage
VGS
Gate-source voltage
Drain current (continuous) at TC = 25 °C ID
Drain current (continuous) at TC = 100 °C
IDM(1)
Drain current (pulsed)
PTOT
Total power dissipation at TC = 25 °C
ESD
Gate-source, human body model (R = 1.5 kΩ, C = 100 pF)
dv/dt(2)
Peak diode recovery voltage slope
Tstg
Storage temperature range
TJ
Operating junction temperature range
1. Pulse width limited by .