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N-CHANNEL 900V - 3.2Ω - 3.5A TO-220/TO-220FP/I2PAK Zener-Protected PowerMESH™III MOSFET
TYPE STP3NC...
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N-CHANNEL 900V - 3.2Ω - 3.5A TO-220/TO-220FP/I2PAK Zener-Protected PowerMESH™III
MOSFET
TYPE STP3NC90Z/FP STB3NC90Z-1
s s
STP3NC90Z - STP3NC90ZFP STB3NC90Z-1
VDSS 900V 900V
RDS(on) < 3.5Ω < 3.5Ω
ID 3.5 A 3.5 A
3 1 2
s s s
TYPICAL RDS(on) = 3.2Ω EXTREMELY HIGH dv/dt AND CAPABILITY GATE TO - SOURCE ZENER DIODES 100% AVALANCHE TESTED VERY LOW GATE INPUT RESISTANCE GATE CHARGE MINIMIZED
TO-220
TO-220FP
12
3
DESCRIPTION The third generation of MESH OVERLAY™ Power
MOSFETs for very high
voltage exhibits unsurpassed on-resistance per unit area while integrating back-toback Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications. APPLICATIONS s SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION s WELDING EQUIPMENT ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM (q ) PTOT IGS VESD(G-S) dv/dt VISO Tstg Tj January 2001 Parameter Drain-source
Voltage (VGS = 0) Drain-gate
Voltage (RGS = 20 kΩ) Gate- source
Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate-source Current (*) Gate source ESD(HBM-C=100pF, R=15KΩ) Peak Diode Recovery
voltage slope Insulation Withstand
Voltage (DC) Storage Temperature Max. Operating Junction Temperature
I2PAK (Tabless TO-220)
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Value STP(B)3NC90Z(-1) 900 90...