STB36NF06L, STP36NF06L
Datasheet
Automotive-grade N-channel 60 V, 32 mΩ typ., 30 A STripFET II Power MOSFET in a D²PAK a...
STB36NF06L, STP36NF06L
Datasheet
Automotive-grade N-channel 60 V, 32 mΩ typ., 30 A STripFET II Power
MOSFET in a D²PAK and TO-220 packages
TAB TAB
3 1 D2PAK
TO-220
1 23
D(2, TAB)
Features
Order codes STB36NF06LT4
STP36NF06L
VDS 60 V 60 V
AEC-Q101 qualified Exceptional dv/dt capability 100% avalanche tested Low gate charge
RDS(on) max. 40 mΩ 40 mΩ
ID 30 A 30 A
G(1) S(3)
Applications
Switching applications
AM01475v1_noZen
Description
This Power
MOSFET has been developed using STMicroelectronics' unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.
Product status links STB36NF06L STP36NF06L
Product summary
Order code
STB36NF06LT4
Marking
B36NF06
Package
D²PAK
Packing
Tape and reel
Order code
STP36NF06L
Marking
P36NF06L
Package
TO-220
Packing
Tube
DS3365 - Rev 4 - October 2022 For further information contact your local STMicroelectronics sales office.
www.st.com
STB36NF06L, STP36NF06L
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS
Drain-source
voltage (VGS = 0 V)
VDGR
Drain-gate
voltage (RGS = 20 kΩ)
VGS
Gate-source
voltage
Drain current (continuous) at TC = 25 °C ID
Drain current (continuous) at TC = 100 °C
IDM(1)
D...