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STP36N06L STP36N06LFI
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
R DS(...
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STP36N06L STP36N06LFI
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
R DS(on) < 0.04 Ω < 0.04 Ω ID 36 A 21 A
TYPE
VDSS 60 V 60 V
STP36N05L STP36N05LFI
s s s s s s s s s
TYPICAL RDS(on) = 0.033 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY LOGIC LEVEL COMPATIBLE INPUT 175oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION
3
TO-220
APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s REGULATORS s DC-DC & DC-AC CONVERTERS s MOTOR CONTROL, AUDIO
AMPLIFIERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)
ABSOLUTE MAXIMUM RATINGS
Symbol
V DS V DGR V GS ID ID I DM ( ) P tot V ISO T stg Tj
Drain-source
Voltage (V GS = 0) Drain- gate
Voltage (R GS = 20 k Ω ) Gate-source
Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation at T c = 25 o C Derating Factor Insulation Withstand
Voltage (DC) Storage Temperature Max. Operating Junction Temperature
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INTERNAL SCHEMATIC DIAGRAM
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ISOWATT220
Value STP36N06L 60 60 ± 15 36 25 144 120 0.8 -65 to 175 175 21 14 144 40 0.27 2000 STP36N06LFI
Unit
V V V A A A
() Pulse width limited by safe operating area
November 1996
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