STI360N4F6, STP360N4F6
Automotive-grade N-channel 40 V, 1.46 mΩ typ., 120 A STripFET™ F6 Power MOSFETs in I²PAK and TO-2...
STI360N4F6, STP360N4F6
Automotive-grade N-channel 40 V, 1.46 mΩ typ., 120 A STripFET™ F6 Power
MOSFETs in I²PAK and TO-220 packages
Datasheet - production data
Features
TAB
TAB
123
I²PAK
3 2 1
TO-220
Figure 1. Internal schematic diagram
'7$%
*6
Order codes STI360N4F6 STP360N4F6
VDS 40 V
RDS(on) max.
ID
1.8 mΩ
120 A
Designed for automotive applications and AEC-Q101 qualified
Very low on-resistance Low gate charge High avalanche ruggedness Low gate drive power loss
Applications
Switching applications
Description
These devices are N-channel Power
MOSFETs developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power
MOSFETs exhibit very low RDS(on) in all packages.
$0Y
Order codes STI360N4F6 STP360N4F6
Table 1. Device summary
Marking
Packages
360N4F6
I²PAK TO-220
December 2015
This is information on a product in full production.
DocID023419 Rev 2
Packing Tube
1/14
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Contents
Contents
STI360N4F6, STP360N4F6
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves)
............................ 6
3
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4
Package information . . . . . . . . . . . . . . . . . . . . . . . . . . ...