STP3481

P Channel Enhancement Mode MOSFET STP3481 -5.2A DESCRIPTION The STP3481 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION TSOP-6P FEATURE z z z z z -30V/-5.2A, RDS(ON) = 55m-ohm @VGS = -10V -30V/-4.2A, RDS(ON) = 75m-ohm @VGS = -4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability TSOP-6P package design 1.2.5.6.Drain PART MARKING TSOP-6P www.DataSheet4U.com 3.Gate 4.Source Y: Year Code A: Process Code ORDERING INFORMATION Part Number STP3481S6RG ※ Process Code : A ~ Z ; a ~ z 1 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com STP3481 2006. V1 Package TSOP-6P Part Marking 81YA P Channel Enhancement Mode MOSFET STP3481 -5.2A ※ STP3481S6RG S6 : TSOP-6P ; R : Tape Reel ; G : Pb – Free ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain CurrentTJ=150℃) Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation Operation Junction Temperature Storgae Temperatur...