STP30NM60N

DataSheet.in STB30NM60N,STI30NM60N,STF30NM60N STP30NM60N, STW30NM60N N-channel 600 V, 0.1 Ω, 25 A, MDmesh™ II Power MOSFET TO-220, TO-220FP, TO-247, D2PAK, I2PAK Features Type STB30NM60N STI30NM60N STF30NM60N STP30NM60N STW30NM60N VDSS @ TJmax 650 V 650 V 650 V 650 V 650 V RDS(on) max <0.13Ω <0.13Ω <0.13Ω <0.13Ω <0.13Ω ID 25A 25A 25A(1) 25A 25A PW 190 W 190 W 40 W 190 W 190 W 3 1 2 1 3 2 3 1 3 12 D²PAK 2 1 3 I²PAK TO-247 1. Limited only by maximum temperature allowed ■ ■ ■ 100% avalanche tested Low input capacitance and gate charge Low gate input resistance TO-220 TO-220FP Application ■ Figure 1. Internal schematic diagram Switching applications Description This series of devices is designed using the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest onresistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Table 1. Device summary Marking 30NM60N 30NM60N 30NM60N 30NM60N 30NM60N Package D²PAK I²PAK TO-220FP TO-220 TO-247 Packaging Tape and reel Tube Tube Tube Tube Order codes STB30NM60N STI30NM60N STF30NM60N STP30NM60N STW30NM60N July 2008 Rev 2 1/18 www.st.com 18 DataSheet.in Contents STB30NM60N,STI30NM60N,STF30NM60N,STP30NM60N,STW30NM60N Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristi...