STP30N06 STP30N06FI
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
TYPE STP30N06 STP30N06FI
s s s s s s s s
V DSS 60 V 60 V
R DS( on) < 0.05 Ω < 0.05 Ω
ID 30 A 19 A
TYPICAL RDS(on) = 0.045 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE APPLICATI...
