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STP2N60FI

STMicroelectronics

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

www.DataSheet4U.com STP2N60 STP2N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP2N60 STP2N60FI s s s s ...


STMicroelectronics

STP2N60FI

File Download Download STP2N60FI Datasheet


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www.DataSheet4U.com STP2N60 STP2N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP2N60 STP2N60FI s s s s s V DSS 600 V 600 V R DS( on) < 3.5 Ω < 3.5 Ω ID 2.9 A 2.2 A TYPICAL RDS(on) = 3.2 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED CHARACTERIZATION TO-220 3 1 2 1 2 3 APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s CHOPPER REGULATORS, CONVERTERS, MOTOR CONTROL, LIGHTING FOR INDUSTRIAL AND CONSUMER ENVIRONMENT ISOWATT220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter STP2N60 VD S V DG R V GS ID ID ID M( ) P tot V ISO T stg Tj Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 kΩ ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature o o Value STP2N60FI 600 600 ± 20 2.9 1.7 11 70 0.56  -65 to 150 150 2.2 1.3 11 35 0.28 2000 Unit V V V A A A W W/o C V o o C C () Pulse width limited by safe operating area December 1996 1/10 www.DataSheet4U.com STP2N60/FI THERMAL DATA TO-220 R thj-cas e Rthj- amb Rt hc- sin k Tl Thermal Resistance Junction-case Max 1.78 62.5 0.5 300 ISOWATT220 3.57 o o o C/W C/W C/W o C Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature F...




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