STP2HNC60FP

N-CHANNEL 600V - 4Ω - 2.2A TO-220/TO-220FP PowerMesh™II MOSFET TYPE STP2HNC60 STP2HNC60FP s s s s s STP2HNC60 STP2HNC60FP VDSS 600 V 600 V RDS(on) <5Ω <5Ω ID 2.2 A 2.2 A TYPICAL RDS(on) = 4 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED TO-220 3 1 2 1 2 3 DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVER s TO-220FP INTERNAL SCHEMATIC DIAGRAM www.DataSheet4U.com ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (q ) PTOT dv/dt VISO Tstg Tj . Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature -2.2 1.4 8.8 60 0.48 Value STP2HNC60 600 600 ± 30 2.2(*) 1.4(*) 8.8(*) 30 0.24 3.5 2000 –65 to 150 150 (1)ISD ≤ 2.2A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, T j ≤ TJMAX (*).Limited only by maximum temperature allowed ...