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STP25N06FI

ST Microelectronics

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

www.DataSheet4U.com STP25N06 STP25N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP25N06 STP25N06FI s s ...


ST Microelectronics

STP25N06FI

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www.DataSheet4U.com STP25N06 STP25N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP25N06 STP25N06FI s s s s s s s s V DSS 60 V 60 V R DS( on) < 0.065 Ω < 0.065 Ω ID 25 A 16 A TYPICAL RDS(on) = 0.048 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION 3 1 2 1 2 3 TO-220 ISOWATT220 APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s REGULATORS INTERNAL SCHEMATIC DIAGRAM s DC-DC & DC-AC CONVERTERS DataSheet4U.com s MOTOR CONTROL, AUDIO AMPLIFIERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) DataShee ABSOLUTE MAXIMUM RATINGS Symbol Parameter STP25N06 VD S V DG R V GS ID ID ID M( ) P tot V ISO T stg Tj Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 kΩ ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature o o Value STP25N06FI 60 60 ± 20 25 17 100 90 0.6  -65 to 175 175 16 11 100 40 0.27 2000 Unit V V V A A A W W/o C V o o C C () Pulse width limited by safe operating area December 1996 1/10 DataSheet4U.com DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com STP25N06/FI THERMAL DATA TO-220 R thj-cas e Rthj- amb Rt hc- sin k T...




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