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N-CHANNEL 30V - 0.038Ω - 22A TO-220 STripFET™ POWER MOSFET
TYPE STP22NF03L
s s s s
STP22NF03L
VDS...
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N-CHANNEL 30V - 0.038Ω - 22A TO-220 STripFET™ POWER
MOSFET
TYPE STP22NF03L
s s s s
STP22NF03L
VDSS 30V
RDS(on) <0.05Ω
ID 22A
TYPICAL RDS(on) = 0.038Ω EXCEPTIONAL dv/dt CAPABILITY LOW GATE CHARGE AT 100°C APPLICATION ORIENTED CHARACTERIZATION
3 1 2
DESCRIPTION This Power
Mosfet is the latest development of STMicroelectronics unique “Single Feature Size™” stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
TO-220
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS DC-DC & DC-AC CONVERTERS s MOTOR CONTROL, AUDIO
AMPLIFIERS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s AUTOMOTIVE ENVIRONMENT
s
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM (q) PTOT dv/dt (1) EAS (2) Tstg Tj Parameter Drain-source
Voltage (VGS = 0) Drain-gate
Voltage (RGS = 20 kΩ) Gate- source
Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery
voltage slope Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature Value 30 30 ±15 22 16 88 45 0.3 6 200 –65 to 175 175
(1) I SD ≤10A, di/dt ≤300A/µs, VDD ≤ V (BR)DSS, Tj ≤ T JMAX. (2) Starting T j=25°C, ID=11A, V DD=15V
Unit V V V A A A W W/°C V/ns mJ °C °C
(q) Pulse width limited by safe operating...